MOSFET
Metal Oxide Semiconductor Field Effect Transistor
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Backend Test For Packaging Devices
Power MOSFETs need a lot of different tests. We understand backend test, and have over 80% of our installations used in this application, operational 24hrs every day delivering fully tested and QA approved products at throughput rates up to 20kuph. Backend test, for power devices in particular, has a diverse, but well-established list of technical demands to detect both failures and failure mechanisms.
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General-Purpose Power MOSFETs
*Support for high-efficiency drive and low heat design*MOSFETs suitable for switching (motor drive, etc.) and load switch applications*Low on-resistance, high-speed switching, and high-robustness
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Discrete & Power Modules
A product portfolio that offers full spectrum of high, medium and low voltage power discrete devices along with advanced power module solutions, including IGBT, MOSFET, SiC, Si/SiC Hybrid, Diode, SiC Diode, and Intelligent Power Modules (IPMs).
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Integrated Board Power Management Functions For The Forward Thinking Engineer
Power Manager II
*Up to 12 differential voltage sensors with immunity to noise on ground plane*Voltage trimming to within 1%*Ruggedized CPLD with up to 48 macrocells for sequencing and supervisory signal logic*Large operating power supply range (3.3 V + 20% to 3.3 V -15%)*Up to 4 High-Voltage MOSFET Driver Outputs*Voltage Measurement with 10-bit ADC through I2C*Up to 8 On-chip DACs for Margining and Trimming
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Floating Power FET moduleAmp Loop
PFM1010
The PFM1010 Module is a precision instrument capable of measuring all common DC parameters in a power MosFet as well as many of the AC parameters. This module uses some very innovative techniques to make it possible to measure parameters like Rdson down into the sub-million-ohm range.
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MOSFETs, MESFETs, and Schottky Diodes
Semiconductor Module
The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions.
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DrMOS (Driver + FET)
Renesas' high-performance DrMOS power modules combine a high-performance FET driver and MOSFETs in an advanced package to create high-density DC/DC converters.
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Rad Hard MOSFET Drivers
Renesas' broad portfolio of radiation hardened MOSFET drivers provide highly reliable performance in space and harsh radiation environments.
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Hi-Speed Discrete Test System
QT-6000
QT-6000 Test System, with built-in capacitance test (DC+CAP) and Scanbox etc, is applicable to devices like medium & small power transistors, MOS-FET, diodes and Wafer.
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Test System Mainframe
ITC59000
The ITC59000 Test Platform is a desktop DynamicParametric Test System mainframe. The ITC59000Test Platform accepts up to four Test MeasurementUnits (TMUs) that perform transient measurements onsemiconductor devices such as power MOSFETs,IGBTs, and diodes.
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Medium & High Voltage Pulse Generators (Rise Time > 1 ns)
Offer fast medium voltage pulsing with high current capability. These models are ideal for driving solenoids, pulse testing of MOSFETs, and other applications.
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Wide Bandgap Transistors
The key for the next essential step towards a more energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors (WBG) which allow for increased power efficiency, smaller size, lighter weight, lower system cost or all of these together. STMicroelectronics offers the broadest product and technology portfolio of silicon carbide (MOSFETs) and gallium-nitride-based (e-mode HEMT) devices, covering bare dies, discretes and modules belonging to the STPOWER family.
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Modules - Modules, Automotive
Automotive modules from Vishay feature a range of technologies including FRED Pt®, High Voltage, MOSFETs, and Silicon Carbide (SiC).
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Power ICs - VRPower® (DrMOS) - Power Stage
The Next Generation VRPower® Power Stage, Vishay’s family of VRPower modules offers an integrated MOSFET and driver power stage with unsurpassed performance. The flagship device, SiC620R is capable of 70 A and achieves more than 95 % efficiency in a typical multiphase buck converter design. The device has several package enhancements that enable it to offer superior MOSFET dynamic performance. Combined with Vishay’s state-of-the-art Gen IV MOSFET technology, these enhancements enable 3 % better efficiency and over 50 °C lower operating temperatures compared to previous generation DrMOS devices while shrinking the footprint by 33 %.
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DCDC
QQA Series
The QQA series features the latest in MOSFET design, state of the art surface mount technology, and offers a 4:1 ultra-wide input range, and efficiencies greater than 80% (typ). Features include continuous short circuit protection, 500 Vdc I/O isolation, and an operating temperature range of -25°C to +71°C with no derating. All models are packaged in a six-sided shielded miniature case measuring only 1.0” x 2.0” x 0.4” high.
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MOSFETs
Products for a variety of applications, such as power supply, motor drive, high frequency amplification, and load switches.
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Relays & Contactors
Panasonic Industrial Devices Sales Company of America
Relay options include Panasonic's exclusive PhotoMOS® Semiconductor Relays (otherwise known as Photo, Photo Voltaic, Solid State or MOS-FET Relays) along with Power, Signal, Automotive and High Frequency Relays.
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RF Power Transistors
Silicon MOSFET
Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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PathWave IC-CAP PSP Model Extraction Package
W7021E
The W7021E PathWave IC-CAP PSP Model Extraction Package provides measurement and extraction procedures for PSP, a CMC industry-standard model advanced surface potential model for MOSFET devices.
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Active Switching Rectifiers, 2 KW, P/N 6016C
- Active Switching Rectifier, 2 KW, P/N 6016C- Input Range: 9 VAC to 35 VAC, 3 PH- Frequency Range: DC to 10 kHz- DC output: 13.5 VDC, 70 Amps without any heatsink (Test #1)- DC output: 13.5 VDC, 150 Amps with heatsink (Test #2)- Dimensions: 8″W x 8″L x 3″H or similar- AC to DC and DC to DC applications- Generates less heat as power MOSFET Switching is used- The output voltage is the same as the input voltage
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Automated Discrete Semiconductor Tester (ATE)
5000E
Same Proven Technology as all 5000 Series Testers. High Speed Single Test Measure. Capable of Testing Multiple and Mixed Devices. 1KV Standard, 2KV Optional. 1NA to 50A Standard, 100A Optional. 0.1NA Resolution. Complete Self Test. Auto-Calibration. RDSON to 0.1MOHM Resolution. Windows Application Software. Optional Scanner. Optional Wafer Mapping. Optional Curve Trace. MOSFET, IGBT, J-FETTriac, SCR, Sidac, Diac, Quadrac, STS, SBS Transistor, Diode, Opto, Zener Regulator, MOV, Relay. UNDER $23,000.00
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32CH 4-20mA Current Sink Card
SET-1250
Each channel provides an isolating relay and a short-circuit MOSFET with which opening and short-circuit errors can be simulated. The short-circuit MOSFET has overcurrent protection with integrated current limitation.





















