GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Dynamic Test Systems
H3TRB | HTGB (HTGS) | RTGB (RTGS)
Durability and reliability of wide-bandgap materials such as SiC and GaN are an important topic. The focus here is on new failure mechanisms whose effects are not visible with traditional H(3)TRB/HTGS – but which nevertheless have an influence on the real application.
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GaN 100W Power Amplifiers
PE15A5033F
The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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DL-ISO 200 Vpp MMCX Tip
DL-ISO-200V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Power Management Controller
Macom Technology Solutions Holdings Inc.
Hghly integrated Power Management Integrated Circuit for GaN Power Amplifier
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LED/IGBT Driver
SiC/GaN
Mornsun Guangzhou Science & Technology
MORNSUN offers high quality IGBT driver, LED driver and driver power module for IGBT driver and SiC/GaN gate driver, which feature a compact design, are energy-efficient and robust with high quality at an affordable price. Especially MORNSUN LED driver is a step-down constant current source for driving high-power LED providing high efficiency, wide input voltage range, high temperature working capacity and complete functions. All of these driver power modules are applicable for multiple commercial and industrial applications.
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500 MHz 60 V Common Mode Differential Probe
DL05-HCM
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Osram High Power Blue Violet Laser Diodes (450-488nm)
The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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Driver Amplifiers (< 3 W)
Qorvo's driver amplifiers are designed to provide good linear or efficiency performance for gain stages prior to the final power amplifier in a transmitter chain. These products support frequencies up to 46 GHz, using process technologies such as InGaP HBT, power pHEMT, E/D pHEMT and GaN.
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Programmer
Gang2000
The GANG2000 Programmer is a multi-tap device that can quickly and efficiently program multiple independent target boards that use the Texas Instruments C2000 32-bit Microcontrollers from a Windows PC over a high-speed USB2.0 port. You can also use the Gang2000 during program development as a JTAG emulator.
