Field Effect Transistor
Rely on an electric field to control the shape and channel of a charge carrier in a semiconductor material.
See Also: Transistor, NPN Transistor
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Rad Hard GaN Drivers
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The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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Product
High Impedance Preamplifier
1671
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The Model 1671 is a single ended low noise field effect transistor
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Product
Discrete Devices High-speed Testing System
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QT-6000 discrete device high-speed testing machine is suitable for testing small and medium-power diodes, transistors, field effect transistors and other products and wafers. It can expand built-in capacitance testing (DC+CAP), EAS, VC, pA modules, as well as external LCR (ultra high precision capacitance testing), Scanbox, etc. The machine can be used for FT mass production testing or laboratory testing.
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Product
Rad Hard GaN FETs
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Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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Effectiveness
Shielding
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The Sielding Effectiveness (SE) is measured in accordance withMil-Std. 285, NSA 65-6 and EN 50147 1.
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Transistor Arrays
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Renesas' portfolio of transister arrays include NPN, PNP, NPN-PNP combination transistor arrays based on our complementary UHF-1 SOI process. This portfolio also includes ultra high frequency transistor arrays for VHF/UHF amplifiers, VHF/UHF mixers, IF converters, synchronous detectors. Dual long-tailed pair transistor arrays and Gilbert Cell UHF transistor arrays are also available for wireless communication systems, radio and satellite communications and high performance instrumentation.
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MOS Transistor Selector
UI9611
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Measure parameters: Open voltage UGS (th), internal resistance RDS, Transconductance gm, Withstand voltage V (BR) DS• Test range: UGS (th) 0.1-9.9V; RDS 0.001-9.999Ω gm; 0.10-10.00s; V (BR) DS 50-650V• Test current range: 0.1A-5A adjustable, comply with different working situation• Automatic selecting, out of limit alarming, advance the work efficiency• The technique of testing RDS under the big-current, is advanced technique
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Product
RF Power Transistors
Silicon Bipolar
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Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Wide Bandgap Transistors
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The key for the next essential step towards a more energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors (WBG) which allow for increased power efficiency, smaller size, lighter weight, lower system cost or all of these together. STMicroelectronics offers the broadest product and technology portfolio of silicon carbide (MOSFETs) and gallium-nitride-based (e-mode HEMT) devices, covering bare dies, discretes and modules belonging to the STPOWER family.
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RF Power Transistors
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A specialized semiconductor device designed to amplify or switch high-frequency (Radio Frequency) signals, enabling powerful wireless communication in everything from cell phones and Wi-Fi to radar and satellite systems by handling significant power levels at speeds from kilohertz to gigahertz.
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Product
RF Power Transistors
Silicon MOSFET
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Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Product
STPOWER RF DMOS Transistors
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ST offers a broad portfolio of RF DMOS (double-diffused metal oxide semiconductor) transistors operating from a supply voltage ranging from 50 up to 100 V with high reliability (1 million power cycles). Targeting applications in the 1 to 250 MHz frequency range, our RF DMOS transistors feature high peak power (up to 1.2 kW) and high ruggedness capability (infinite:1 VSWR).
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Product
Hall Effect Sensor
907 XP (Explosion Proof)
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Features • NPN open collector, square-wave output • Zero speed operation with no signal loss • Non-contact, large gap distance sensing • Signal transmits up to 1,500 ft • Simple to install and set up • Powered by 5-24 VDC • Class I, Div I (D) Class II, Div I (E, F, G) Class III • XLB-3 enclosure • Bi-directional option (907B XP)
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Hall Effect Sensors
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The Mors Smitt transducers are used to measure high currents in rolling stock and trackside applications. High currents are converted linearly to low power signals.
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Product
Field Tester
Ether.Genius
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Ether.Genius is a handheld tester 100% suitable for labs or field use because is full equipped (IP/Ethernet/PTP/T1/E1), battery operated (up to 24h of operation), light (1.1kg) and very rugged. The unit is able to test Ethernet/IP networks up to 1Gb/s while supporting master/slave Sync-E/PTP emulation. It also has interfaces for PDH/T1/E1/E0 and IEEE C37.94. Operation modes includes Performance, Quality and Wander tests at all interfaces and the ability to emulate and analyse PTP/SyncE, while measuring Freq./Phase, PDV metrics, analyse/generate TIE/MTIE/TDEV and TE. A built-in Rubidium clock disciplined with GPS provides an accuracy of a few nsec.
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Product
Resistivity and Hall Effect
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The Resistivity System allows the user to make Resistivity and Hall Effect measurements in the range of to M. Samples are mounted on special platforms inside the VTI with contacts made to the sample according to the customer's requirements.
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Product
Hall Effect Sensors
906
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Features • NPN open collector, square-wave output • Zero speed operation with no signal loss • Non-contact, large gap distance sensing • Signal transmits up to 1,500 ft • Simple to install and set up • Powered by 5-24 VDC • Bi-directional option 906B
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Product
Bipolar Transistors
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Renesas transistors offer a package lineup including ultra-small packages, suitable for a variety of applications such as large current applications, amplifiers, and support customers' systems.
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Hall Effect Measurement System
RH 2010
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The RH 2010 Hall Effect Measurement System has been designed for high flexibility and ease of use as a standard system for quick routine control measurements as well as for sophisticated temperature dependent Hall measurements for material research.
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Product
Hall Effect Sensor Elements/ICs
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ChenYang Technologies GmbH & Co. KG
is a sophisticated Hall Effect Gear Tooth IC featuring an on-chip 12-bit A/DConverter and logic that acts as a digital sample and hold circuit. A separate 6-bit D/A converterprovides a fixed hysteresis. The sensor does not have a chopper delay. It uses a single Hall platewhich is immune to rotary alignment problems.
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Product
Main Effects
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The Analog Multi FX is an Authentic Analog Multi Effects Pedal equipped with everything you need to get the job done on stage and in the studio. It’s got a Switchless Optical Wah, Distortion, Effects Loop, Stereo Chorus, and Echo. Even better these are reissues of classic Morley circuits leading all the back to the 1970’s. And speaking of the 70’s it also has a new finish that pays homage to the original chrome Morley pedals. It’s Heavy-Duty spun stainless steel that’s Built like a Tank and looks great under stage lights. Each one is hand spun at our Illinois facility.
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Product
Field Fiber Cleaver
HW-09C
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Shanghai Fibretool Technology Co.,Ltd.
The Fibretool HW-09C is a single fiber cleaver designed to accommodate either 900µm buffered or 250µm coated fiber. The HW-09C cleaver's quick and easy three-step operation is well suited for mechanical splice and quick termination field connector applications. The leaf spring base is ruled to allow for cleave lengths of 2 to 20mm. The standard carbide blade will perform up to 6000 cleaves before replacement.
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Product
Magnetic Effects Test
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This test determines if an object can operate normally in strong externally generated magnetic environments. The magnetic effect test helps to assist in determining the proper location of the equipment in the installation.
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Product
Selective Field Analyzer
SFA-S
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Active broadband isotropic antenna combined with portable USB powered spectrum analyzer. OFA-S/SE antenna has frequency response independent of antenna or electric field orientation. It offers broad dynamic range for the variety of RF regulatory, safety, EMC, wireless and telecommunications applications. Spectrum analyzer SA-S displays the frequencies and field strength of selected signals, allowing all results to be viewed and stored on PC.
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Hall Effect Measurement system
HMS-3000
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Hall Effect Measurement System is very useful for measuring Carrier Concentration, Mobility, Resistivity and Hall Coefficient that should be pre-checked in order to grasp the electrical specifications of semiconductor device. Therefore, it is essentially required system to understand the electrical characteristics of semiconductor device.Ecopia’s HMS series consist of constant current source , terminal conversion system by Van der Pauw technique, low temperature(77K) test system and magnetic flux density input system. So, it is well-established system that has all the things needed to Hall Effect Measurement System.
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Product
AC/DC Hall Effect Sensors
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The PC clamps can measure currents from 10A to 7500A* on conductors with a maximum diameter of 80mm (100x64mm and 122x54mm). They are available either with an internal battery or in versions which require an external battery or a dc power supply.
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Hall Effect Systems
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The MeasureReady™ measurement controller is a revolutionary, all-in-one Hall analysis instrument that delivers significantly higher levels of precision, speed, and convenience to researchers involved in the study of electronic materials.
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Product
Broadband Field Meter
NBM-550
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*Intelligent probe interface detects probe parameters*Fully automatic zero point adjustment*Memory for saving up to 5,000 measurement results*PC software for convenient data management*Voice recording for comments*Conditional logging: Measured value saved when a threshold value is exceeded
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Product
Hall Effect Sensor
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The hall effect sensor products are manufactured according to international standards. Being an ISO 9001:2008, ISO 14001 and OHSAS 18001 certified company, DER EE is capable of designing and producing superior products to the highest standards of customers' requirements. Hall effect sensors we provided are a device containing both the sensor which produces a very low signal level and contains the vacuum tube amplifier and a high gain integrated circuit (IC) amplifier in a single package. hall effect sensor offer many applications to sense position and motion, to control electric motor control, to sense wheel rotation and so on.
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Product
Rotary Hall Effect Sensor
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The output of the Rotary Hall-effect sensor is a voltage which changes in direct proportion to the shaft angle. The sensor is non-contact, using Hall elements to determine the angle of a magnet. The magnet is either mounted in a shaft integral to the sensor or can be mounted externally to the sensor.
