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NPN Transistor
See Also: Transistor, Field Effect Transistor
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Modbus Digital Input Output Modules
DAT3100 Series
The Datexel DAT3100 series is a range of Modbus digital input output modules. These cards or modules have the ability to accept digital voltage inputs and provide an output by the way of relays, NPN or PNP transistors. The DAT3100 devices can communicate with RS485 or RS232 on a Modbus or ASCII protocol making the DAT3100 series a very economical solution to large and small scale Data Acquisition. Combining these digital input output devices with the DAT9000 controllers and the DAT3000 analog input output modules make Datexel the smart choice where Data Acquisition is needed.
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Atlas DCA Semiconductor Analyser
DCA55
Intelligent and flexible semiconductor analyser. Connect any way round! The DCA55 then displays the following on its backlit alphanumeric display:- Component type (such as NPN transistor, P-Ch MOSFET, LED, diode etc)- Pinout information (such as Base, Emitter, Collector etc)- Parameter measurement (hFE, Vbe, Vf, leakage current etc)
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Inductive Sensors
In general, inductive proximity switches consist of four basic elements: a coil, an oscillator, a threshold switch and an output stage with short-circuit protection.The oscillator generates a high frequency, electromagnetic alternating field which is emitted from the active face of the coil.Eddy currents are induced in a metal object that enters this field. These eddy currents draw energy from both the electromagnetic field and from the oscillator which is consequently attenuated.The more energy taken the closer the metal object moves towards the active face. The threshold switch switches on the output stage at a defined attenuation value.In proximity switches with a DC voltage supply, this switch is designed as an NPN transistor which switches the connected load to the negative pole or as a PNP transistor which switches the load to the positive pole. The output stage is a thyristor or a triac in AC voltage switches.
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Transistor Arrays
Renesas' portfolio of transister arrays include NPN, PNP, NPN-PNP combination transistor arrays based on our complementary UHF-1 SOI process. This portfolio also includes ultra high frequency transistor arrays for VHF/UHF amplifiers, VHF/UHF mixers, IF converters, synchronous detectors. Dual long-tailed pair transistor arrays and Gilbert Cell UHF transistor arrays are also available for wireless communication systems, radio and satellite communications and high performance instrumentation.
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MOS Transistor Selector
UI9611
Measure parameters: Open voltage UGS (th), internal resistance RDS, Transconductance gm, Withstand voltage V (BR) DS• Test range: UGS (th) 0.1-9.9V; RDS 0.001-9.999Ω gm; 0.10-10.00s; V (BR) DS 50-650V• Test current range: 0.1A-5A adjustable, comply with different working situation• Automatic selecting, out of limit alarming, advance the work efficiency• The technique of testing RDS under the big-current, is advanced technique
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RF Power Transistors
Silicon Bipolar
Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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STPOWER RF DMOS Transistors
ST offers a broad portfolio of RF DMOS (double-diffused metal oxide semiconductor) transistors operating from a supply voltage ranging from 50 up to 100 V with high reliability (1 million power cycles). Targeting applications in the 1 to 250 MHz frequency range, our RF DMOS transistors feature high peak power (up to 1.2 kW) and high ruggedness capability (infinite:1 VSWR).
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Photocouplers/Optocouplers Transistor Output
The PS2xxx series, a range of transistor output type general-purpose photocouplers (optocouplers), feature a high isolation voltage, high temperature operation and compliance with various international safety standards.
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STPOWER RF LDMOS Transistors
ST offers a broad portfolio of RF LDMOS (lateral double-diffused metal oxide semiconductor) transistors operating from a supply voltage of 7 to 50 V. They target applications in the 1 MHz to 4 GHz frequency range and feature high peak power up (>1 kW) and high ruggedness capability.
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Simulation Models for Passive Components, Transistors, Diodes, etc.
An indispensable collection of the industry''s most advanced simulation models for passive components, transistors, diodes and more. These reliable, measurement-based models maximize the RF/MW electronic design automation (EDA) process, reduce design cycle times, and lower product development cost. With a few EASY steps, the Modelithics Model Libraries are ready to use in EDA tools.
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Bipolar Small Signal Transistors
A comprehensive lineup of small packages are available, as well as dual products that take up little space and other composite products.
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Wide Bandgap Transistors
The key for the next essential step towards a more energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors (WBG) which allow for increased power efficiency, smaller size, lighter weight, lower system cost or all of these together. STMicroelectronics offers the broadest product and technology portfolio of silicon carbide (MOSFETs) and gallium-nitride-based (e-mode HEMT) devices, covering bare dies, discretes and modules belonging to the STPOWER family.
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Transistor Curve Tracers
Store characteristic curves and panel setting parameters. Programmable test conditions ,measured results PC stored. Three cursor measurement modes: point, line, window. Two cluster characteristic curves display simultaneouslyfor compare and pairing. Screen read outβ, gm, Vce, Ic, breakdown voltage, leakage current and other parameters . Repeat and single measurement. Self-checking function . 7 Inch high-resolution TFT color LCD. Standard interface: USB, RS232, LAN
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RF Power Transistors
Silicon MOSFET
Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Matched Transistors
Analog Devices offers dual and quad transistors with excellent matching characteristics. Offset voltages, temperature drift, and hFE matching are individually tested to data sheet specifications. Device performance is guaranteed over industrial and military temperature ranges. Each of these devices is an excellent choice as an input stage for an amplifier or in log/antilog circuits. ADI’s matched transistors offer low noise and high gain, with characteristics approaching an ideal transistor.
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MOS Transistor Selector
UI9610
MOS with superior performance has now been widely used in electronic ballasts, energy-saving lamps were. But power MOS test screening, matching problem. It is difficult due to a lack of corresponding inspection means that many enterprises do not have to engage seriously in quality control as well as the effect of product consistence and reliability. The equipment in a unique program designed to solve the power MOS test problem containing micro-processing, intelligent a few significant simple application.
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Transistor Testing
Radiant is introducing an I2C digital-to-analog converter product that can be attached to the Precision Premier II and is controlled from Vision. The addition of this extra voltage source makes it possible for the Premier II to measure the performance of thin-ferroelectric-film gate transistors (TFFTs and MFSFETs). This document explains the theory for such testing and gives examples of such tests using Radiant's SFRAM transistors as examples.
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Bipolar Transistors
Renesas transistors offer a package lineup including ultra-small packages, suitable for a variety of applications such as large current applications, amplifiers, and support customers' systems.
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Insulated Gate Bipolar Transistors
The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
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Bipolar Power Transistors
A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.
