Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
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Product
ReferenceWafer
RW10
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Materials Development Corporation
MDC presents the RW10 Reference Wafer. A range of capacitors, resistors and semiconductor devices can bemeasured to verify the repeatability and accuracy of measurement systems. The MDC Model RW10 Reference Wafer is not actually a "wafer". It has the shape of a wafer and it includes capacitors, resistors, MOS devices, and a junction device in a wafer configuration to allow rapid verification of proper operation for capacitance-voltage and current-voltage instrumentation.
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Product
Mercury Probes
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Materials Development Corporation
MERCURY PROBES are precision instruments that enable rapid, convenient, and non-destructive measurements of semiconductor samples by probing wafers with mercury to form contacts of well-defined area.
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Product
Software
Junction Measurement and Analysis
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Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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Software
Srive-Level Capacitance Profiling (DLCP) Measurement
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Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Software
Customized Software
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Materials Development Corporation
If the software packages offered do not meet your specific needs,special software can be written for custom applications.The engineers and programmers at MDC candevelop or modify applications to fit your requirements. Examples include: *Customer specific measurements *Interfacing with required meters *Production versions of measurements *Interfacing with probers and other measurement platforms *Specialized requirements
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Software
Production C-V Measurement
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Materials Development Corporation
The production software offers a streamlined C-V plotting and bias-temperature stress program with minimumoperator input. A single keystroke begins the measurement.
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Product
Software
Ion Implant Analysis Option
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Materials Development Corporation
Computes active dose, range, and straggle. Can model implants with various doses, energies and cap materials. Overlays theoretical and actual plots.
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Software
MOS C-V Measurement and Analysis
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Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Software
Solar Cells/ Photovoltaic Devices
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Materials Development Corporation
MDC offers a comprehensive array of current-voltage, capacitance-voltage, and resistivity measurements to characterize solar cells and PV devices. CSM/Win systems and software can help to fine tune your process for maximum efficiency. Critical values such as series and shunt resistances, maximum power point (both actual and theoretical), and fill factor are automatically determined.
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Software
Triangular Voltage Sweep (TVS) Option
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Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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Software
MOS Capacitance-Time Measurement and Analysis
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Materials Development Corporation
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
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Product
C-V Plotters
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Materials Development Corporation
MDC will tailor your CSM/Win Semiconductor Measurement System for your exact requirements. Choose the best capacitance meter, output device, and probe station for your needs. All CSM/Win C-V plotters feature the latest Dell Computers. The computer and capacitance meters are rackmounted in one compact enclosure. When ordered with a hot chuck or probe station, MDC can deliver a turnkey system of unparalleled performance.
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Product
Four-Point Probe
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Materials Development Corporation
Materials Development Corporation offers the complete line of Four Point Probe systems from AIT. Systems are available to measue up to 12" diameter (300 mm) wafers as well as specialty systems for Photovoltaic wafers and substrates. For more information on these systems, contact MDC.
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Software
Conductance Measurement and Analysis
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Materials Development Corporation
MDC uses conductance to give a complete picture of MOS devices as well as to correct for series resistance effects. MDC C-V plotters use conductance and capacitance measurements to plot true device capacitance and depletion region conductance.
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Product
Software
MOS Doping Profile Analysis
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Materials Development Corporation
MDC uses the comprehensive Ziegler algorithm toconvert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
