GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Product
GaN Power Amplifiers > 5W
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Macom Technology Solutions Holdings Inc.
MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense, Industrial, Scientific and Medical applications and 5G wireless infrastructure. MACOM GaN products deliver output power levels ranging from 2 W to over 7 kW and exhibit best in class RF performance with respect to gain and efficiency. For sensitive Aerospace & Defense applications MACOM can offer a US only supply chain with AS9100D Certification.
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Standard GaN Amplifiers
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A GaN (Gallium Nitride) amplifier is a power amplifier that uses GaN, a wide-bandgap semiconductor material, to provide high power density, efficiency, and frequency capabilities.
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GaN 100W Power Amplifiers
PE15A5033F
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The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
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Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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Wideband GaN Amplifiers
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The Teledyne RF & Microwave family of GaN-based amplifiers maximizes power density and efficiency, and establishes a new benchmark for small size in the 0.1 to 6.0 GHz range that operates over multi octave. With dimensions of 2.5"L x 2"W x 0.42"H at only 2.1 cubic inches, these modular, non-ITAR GaN amplifiers maintain the rugged design characteristics needed for harsh airborne and land based requirements.
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Rad Hard GaN Drivers
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The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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Semiconductor Curve Tracer
CS-8000 Series
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The CS-8000 series are equipped with a high-voltage source of up to 5 kV and a high-current source of 2 kA. It features Pulse output, Gate pattern, and very small current measurement capabilities, and it supports the design evaluation of wideband-gap semiconductors such as SiC and GaN.
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Low Temperature Gas Source
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Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.
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DL-ISO 2500 Vpp Square Pin Tip
DL-ISO-2500V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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DL-ISO 40 Vpp MMCX Tip
DL-ISO-40V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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GaN substrates
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Sumitomo Electric Industries, Ltd.
Gallium Nitride (GaN) substrates are widely used for optical devices in the blue-violate to green ranges due to their excellent material characteristics. In recent years, GaN substrates have been drawing attention for power devices. Many development projects are underway.
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High Throughput Test Platform for Multi-Site & Index Parallel Applications
ETS-88
Test Platform
The ETS-88 is an optimal test platform for testing a wide variety of devices including: simple analog, high precision, high voltage, high current / power, automotive, video, audio, complex mixed-signal, as well as emerging power processes like SiC and GaN.
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High Voltage Optically Isolated Probe, 350 MHz Bandwidth. Includes soft-carrying case.
DL03-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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DL-HCM Series High-Temperature Solder-In Tip
DL-HCM-HiTemp
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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ST/MT Family
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MT System is a configurable test equipment suitable to verify static and dynamic parameters of power semiconductors (i.e. IGBT, MOSFET, DIODE, THYRISTOR, SiC, GaN, etc) packaged and unpackaged (discrete, module and substrate). ST System is a test equipment suitable to verify stability or drift of all static parameters of discrete power semiconductors.
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DL-ISO 10 Vpp MMCX Tip
DL-ISO-10V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
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Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Product
Microscope Photoluminescence Spectrometer
Flex One
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Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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High Voltage Fiber Optic Probe, 150 MHz Bandwidth
HVFO108
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Rad Hard GaN FETs
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Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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SSPAs / LNAs / Broadband
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SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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250 MHz 60 V Common Mode Differential Probe
DL02-HCM
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Radio Frequency (RF) And Microwave Products
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Enable your 5G, aerospace, defense, test and measurement or industrial RF wireless applications with our portfolio of RF and microwave devices. These include high reliability RF diodes, Gallium Nitride (GaN) and Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) amplifiers, frequency translation and power transistor devices, switches, attenuators, varactors, filters and more.
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Power Management Controller
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Macom Technology Solutions Holdings Inc.
Hghly integrated Power Management Integrated Circuit for GaN Power Amplifier
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Amplifiers
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We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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Substrate Manufacturing
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KLA’s substrate manufacturing portfolio includes defect inspection and review, metrology and data management systems that help substrate manufacturers manage quality throughout the wafer fabrication process. Specialized wafer inspection and review tools assess wafer surface quality and detect, count and bin defects during production and as a critical part of outgoing wafer qualification. Wafer geometry systems ensure the wafer shape is extremely flat and uniform in thickness, with precisely controlled wafer shape topography. Data analysis and management systems proactively identify substrate fabrication process excursions that can lead to yield loss. KLA’s substrate manufacturing systems support process development, production monitoring and final quality check of a broad range of substrate types and sizes including silicon, prime silicon, SOI, sapphire, glass, GaAs, SiC, GaN, InP, GaSb, Ge, LiTaO3, LiNBO3, and epitaxial wafers.
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DL-ISO 2 Vpp MMCX Tip
DL-ISO-2V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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High-Power CW Amplifiers
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Our family of solid-state power amplifiers (SSPAs) utilizes proprietary technology and a proven building block approach that enables rapid customization to specific requirements. The world-class design team understands the tradeoffs between GaAs versus GaN and FET versus MMIC to quickly achieve the right design for the right problem. Whether you need a connectorized compact GaN SSPA or an integrated SSPA assembly, we have the technical know-how to deliver on-time and on-budget.
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IsoVu Isolated Probes
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The IsoVu Measurement Systems can make nearly impossible measurements – like high-side Vgs- a reality, providing today’s power engineer with measurement insights not available in other power systems and instruments. When performing near-impossible measurements, especially in those involving Gallium Nitride (GaN) and Silicon Carbide (SiC), it can be extremely time consuming and cumbersome. IsoVu eliminates those concerns: IsoVu probes offer better common mode rejection and higher bandwidth for high EMI environments and on power FETs like SiC and GaN.
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Communications/Data Link Amplifiers
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Amplifiers specific to the Communications systems include a wide range of Solid State Power Amplifiers (SSPAs) and Low Noise Amplifiers (LNAs) originally from Paradise Datacom and a range of organically developed products within TMS. Satcom SSPAs are considered a core competence of Paradise Datacom's product line who have invested heavily in converting it's complete amplifier offering from GaAs to GaN from C-Band all the way to Ka-Band.
