GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Product
GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
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Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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Rad Hard GaN Drivers
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The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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GaN Power Amplifiers > 5W
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Macom Technology Solutions Holdings Inc.
MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense, Industrial, Scientific and Medical applications and 5G wireless infrastructure. MACOM GaN products deliver output power levels ranging from 2 W to over 7 kW and exhibit best in class RF performance with respect to gain and efficiency. For sensitive Aerospace & Defense applications MACOM can offer a US only supply chain with AS9100D Certification.
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Product
Ruggedized SSPA 4 to 8 GHz, 40 W GAN Hybrid Module
AMP1110
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Exodus Advanced Communications
Ruggedized Solid State Power Amplifier. Our Best in Class Power Amplifier AMP1110 a 4 to 8 GHz, 40 W Minimum Saturated Power output module. The AMP1110 is a Class AB linear GaN hybrid design with instantaneous bandwidth. Other features include 4.0dB Peak to Peak flatness and 12A Max Consumption. This AMP1110 has Built-in protection circuits, high reliability and ruggedness. It is suitable for any application such as EW, EMI/RFI Lab, and High Power testing.
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Product
GaN 100W Power Amplifiers
PE15A5033F
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The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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Product
DL-ISO 10 Vpp MMCX Tip
DL-ISO-10V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
DL-ISO 2 Vpp MMCX Tip
DL-ISO-2V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Dynamic Test Systems
H3TRB | HTGB (HTGS) | RTGB (RTGS)
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Durability and reliability of wide-bandgap materials such as SiC and GaN are an important topic. The focus here is on new failure mechanisms whose effects are not visible with traditional H(3)TRB/HTGS – but which nevertheless have an influence on the real application.
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High-Power CW Amplifiers
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Our family of solid-state power amplifiers (SSPAs) utilizes proprietary technology and a proven building block approach that enables rapid customization to specific requirements. The world-class design team understands the tradeoffs between GaAs versus GaN and FET versus MMIC to quickly achieve the right design for the right problem. Whether you need a connectorized compact GaN SSPA or an integrated SSPA assembly, we have the technical know-how to deliver on-time and on-budget.
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Product
High Voltage Optically Isolated Probe, 350 MHz Bandwidth. Includes soft-carrying case.
DL03-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Product
SSPAs / LNAs / Broadband
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SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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Product
RF Amplifiers up to 2500 MHz
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L and S Band 1,2,4, and 8 Kilowatt rack mount solid state microwave amplifiers ideal for CW and pulse TWT amplifier replacement utilizing GaN technology and rivals the TWT amplifier in size and weight. Also available is our broad line of high power modules including 25, 50, and 100 watt pallets for integrating into your own power amplifier design.
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Product
DL-ISO 200 Vpp MMCX Tip
DL-ISO-200V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
T/R（Transceiver Module）
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Chengdu KeyLink Microwave Technology Co., Ltd.
RF Amplifiers up to 500MHz LDMOS and GaN are applied for this frequency range of Narrow and Broad band including VHF, UHF bands amplifier modules and offers low risk on heat radiation and long term sustainable operation. Also, controlling and protection circuits are designed.
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Radio Frequency (RF) And Microwave Products
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Enable your 5G, aerospace, defense, test and measurement or industrial RF wireless applications with our portfolio of RF and microwave devices. These include high reliability RF diodes, Gallium Nitride (GaN) and Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) amplifiers, frequency translation and power transistor devices, switches, attenuators, varactors, filters and more.
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Product
Driver Amplifiers (< 3 W)
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Qorvo's driver amplifiers are designed to provide good linear or efficiency performance for gain stages prior to the final power amplifier in a transmitter chain. These products support frequencies up to 46 GHz, using process technologies such as InGaP HBT, power pHEMT, E/D pHEMT and GaN.
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Solid State Broadband High Power Amplifier 1900 - 6000 MHz / 200 Watts
2215
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The 2215 is suitable for octave bandwidth high power CW, modulated and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. for EMC, RF Product Test, Communications and Electronic Warfare applications.
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Product
Solid State GaN (Gallium Nitride) Amplifiers
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Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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Broadband High Power Amplifiers
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Chengdu KeyLink Microwave Technology Co., Ltd.
KeyLink's broadband high power amplifiers are available for operating frequencies from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 2 watts to over 500 watts. Based on state-of-the-art GaN, GaAs, LDMOS power devices and MMICs, KeyLink designs and manufactures SSPA(solid state power amplifiers ) with excellent performance in terms of high efficiency over ultra-wide working band, high reliability and ruggedness.
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Product
Power Management Controller
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Macom Technology Solutions Holdings Inc.
Hghly integrated Power Management Integrated Circuit for GaN Power Amplifier
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Product
DL-ISO 2500 Vpp Square Pin Tip
DL-ISO-2500V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Saluki SPA Series Solid State Power Amplifier (max. 23KW output power)
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Saluki SPA series is a solid-state RF power amplifier with an output frequency of maximum 110GHz and an output power of a maximum of 23000W. Its design is based on the most advanced GaN technology in the industry, and its power output is efficient and reliable. The product has functions such as temperature and current detection, alarm protection and so on.The broadband solid state power amplifier is mainly used for testing and measuring instruments, Communication or interference, aviation control and other fields.*Customization Available*
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Product
Microscope Photoluminescence Spectrometer
Flex One
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Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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Rad Hard GaN FETs
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Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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Product
High Voltage Optically Isolated Probe, 700 MHz Bandwidth. Includes soft-carrying case.
DL07-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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High Voltage Optically Isolated Probe, 1 GHz Bandwidth. Includes soft-carrying case.
DL10-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Product
Amplifiers
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We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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Product
High Voltage Switching Test System
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The advanced development of new technologies, such as SiC and GaN, have opened the opportunity for more efficient and higher voltage/power performance in switching and power management circuits. Their high cutoff frequencies, low on-state resistance, and very high breakdown voltages can increase power supply power handling densities approaching hundreds of watts/inch. Reliability of these new technologies and techniques is critical for realizing practical applications. While Silicon devices have a rich history of proven reliability, these newer compound semiconductor technologies are too new to have a reliability history and have not been well proven. Further, process variations, even in well-controlled lines, yield widely varying results. This has driven the need for additional testing and to burn-in devices prior to delivery.
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Product
RF Amplifiers up to 6000 MHz
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Includes RF and microwave amplifiers covering the band from 500Mhz to 6000Mhz in a single module with either GaN or GaAs devices. Custom and standard power amplifiers available with high linearity, low noise figure, and very low error vector magnitude (EVM). Our rack systems and select modules include Automatic Gain Control (AGC), Automatic Level Control (ALC), and peak/pulse/average detection useful in OTA, MIMO, and CTIA testing.
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Product
Wafer Thickness Measuring System
WT-425
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Contact type can measure any materials within 0.2 µm (2 σ at 20℃ ±1℃). The wafer floats positions while measurement points change and it does not damage even thin wafers. Best for the process control of compound wafers and oxide wafers. (SiC, GaN, LT, Sapphire and Bonded Wafers)
