DRAM Memory Module
Choose the perfect memory solution for your application with Advantech! We offer a full range of industrial-grade RAM memory modules, covering all technologies including DDR4, DDR3, DDR2, DDR with diverse features like Unbuffered, Registered, and ECC.
-
Product
Advantech 8G DDR5-4800 288Pin 1GX16 1.1V Unbuffered Samsung Chip
AQD-D5V8GN48-SC
-
Samsung Original Chip, Increased Banks and Burst Length. DDR5 4.8GT/s, Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
16G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip
AQD-D5V16GN48-SB
-
Samsung Original Chip, Increased Banks and Burst Length. DDR5 4.8GT/s, Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
32G DDR5-4800 288Pin 2GX8 1.1V Unbuffered Samsung Chip
AQD-D5V32GN48-SB
-
Samsung Original Chip, Increased Banks and Burst Length. DDR5 4.8GT/s, Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
16G DDR5-4800 288Pin 2GX8 1.1V Registered Samsung Chip
AQD-D5V16GR48-SB
-
Samsung Original Chip, Dual 32-bit Subchannels. Increased Banks and Burst Length, DDR5 4.8GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
32G DDR5-4800 288Pin 2GX8 1.1V Registered Samsung Chip
AQD-D5V32GR48-SB
-
Samsung Original Chip, Increased Banks and Burst Length. DDR5 4.8GT/s, Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
8GB DDR5-5600 1GX16 1.1V SAM
AQD-D5V8GN56-SC
-
SAM Original Chip, PCB: 30μ gold finger. Anti-sulfuration, On-die ECC for Enhanced RAS. Operating Temperature: 0°C ~ 85°C.
-
Product
8GB DDR5-5600 288Pin 1GX16 1.1V Unbuffered Hynix Chip
AQD-D5V8GN56-HC
-
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s. Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
16GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip
AQD-D5V16GN56-HB
-
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s, Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
32GB DDR5-5600 288Pin 2GX8 1.1V Unbuffered Hynix Chip
AQD-D5V32GN56-HB
-
Hynix Original Chip, Increased Banks and Burst Length, DDR5 5.6GT/s, Same-Bank Refresh, On-die ECC for Enhanced RAS.
-
Product
8G DDR5-5600 1GX16 1.1V SAM -20~85℃
AQD-D5V8GN56-SCH
-
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger, Anti-sulfuration, Semi Wide-temp Support -20~85℃.
-
Product
16G DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-D5V16GN56-SBH
-
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger, Anti-sulfuration, Semi Wide-temp Support -20~85℃.
-
Product
32G DDR5-5600 2GX8 1.1V SAM -20~85℃
AQD-D5V32GN56-SBH
-
SAM Original Chip, Industrial Design for Improved Reliability, PCB: 30μ gold finger, Anti-sulfuration, Semi Wide-temp Support -20~85℃.
-
Product
32GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V32GR56-SB
-
SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
-
Product
16GB R-DDR5 5600 R-Dimm 2GX8 1.1V SAM
AQD-D5V16GR56-SB
-
SAM Original Chip, Industrial Design for Improved Reliability, Compatible with server platform, 30u” golden finger, Operating Temperature: 0°C ~ 85°C.
-
Product
8GB SO-DDR5-5600 1GX16 1.1V SAM
AQD-SD5V8GN56-SC
-
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
-
Product
32GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V32GN56-SB
-
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
-
Product
16GB SO-DDR5-5600 2GX8 1.1V SAM
AQD-SD5V16GN56-SB
-
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
-
Product
32GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V32GN56-SB
-
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
-
Product
16GB DDR5-5600 2GX8 1.1V SAM
AQD-D5V16GN56-SB
-
SAM Original Chip, PCB: 30μ gold finger, Anti-sulfuration, On-die ECC for Enhanced RAS, Operating Temperature: 0°C ~ 85°C.
