Silicon
atomic number 14 tetravalent metalloid chemical element.
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Silicon Pyranometer
SP LITE2
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SP Lite2 can be used under all weather conditions. The sensor measures the solar energy received from the entire hemisphere. It is ideal for measuring available energy for use in solar energy applications, plant growth, thermal convection and evapotranspiration.
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Silicon & Compound Wafers
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Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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Super Silicon Resistivity and Type Tester
HS-3FC II
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Super Silicon Resistivity and Type Tester is specially designed for silicon sorting，it can quickly test the silicon type, heavy-doped, resistivity and current, and can be widely used in all kinds of silicon sorting, like granular polysilicon material, break semiconduct silicon wafer, chunk material, top and tail material and so on. Furthermore, it integrates two probes, three probes and four probes. With the three probes, it could show type and heavy type simultaneously, strongly improved the sorting efficiency.
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Product
5μm Silicon Gold Interdigitated Electrode (IDE)
SIG1
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Silicon gold IDE chip with a 5μm gap for MEMS, photoelectric sensing, and high-precision electrochemical applications.
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Product
Epoxy Resin Silicon Rubber Outdoor Voltage Transformer
JDZW-10RG
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Beijing GFUVE Electronics Co.,Ltd.
Outdoor voltage transformer of the type JDZW-10 is single phase and epoxy resin silicon rubber insulated product, it's used for metering electric energy, voltage control and relay protection in 50/60HZ rated voltage less than 12kV electric system. It can be used for medial voltage AIS, or can be used for medial voltage switchgears. They can operate in all kinds of environments (such as wide range temperature (-50~70℃), high altitude, high humidity, high pollution or salt). This model JDZW-10 outdoor voltage transformer is also as voltage source to supply 220V voltage.
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MICROWAVE SILICON LIMITER PIN DIODES
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Insight Product Company offers Microwave Silicon Limiter PIN Diodes with p+-i-n+ structures are designed to be used in microwave protective  devices included in hybrid integrated circuit (HIC) hermetically sealed, design of which provides protection against  moisture, salt, fog, mycelial fungus, hoarfrost, dew, decreased and increased pressure.
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Product
Silicon Test & Yield Analysis Solutions
Tessent®
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The Tessent product suite combines features of deterministic scan testing, embedded pattern compression, built-in self-test, specialized embedded memory test and repair, and boundary scan, as well as board and system-level test technologies. This comprehensive silicon test and yield analysis solution is built on the foundation of the best-in-class solutions for each test discipline
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10μm Silicon IDE Sensor Chip
SBI1
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10μm silicon interdigitated electrode (IDE) for MEMS gas sensing, biosensing, electrochemical analysis, and photoelectric research.
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X-Band Silicon Radar Quad Core IC
AWS-0103
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The AWS-0103 is a highly integrated silicon quad core IC intended for radar and 5G phased array applications. The device supports four radiating elements, single beam transmit, and dual beam receive and includes all requisite beam steering controls for 6 bit phase and gain control. The device provides 21 dB gain and +15 dBm output power during transmit mode and 7 dB gain and +7 dBm IIP3 during receive mode. Additional features include gain compensation over temperature, temperature reporting, and fast beam switching using eight on-chip beam weight storage registers. The device features ESD protection on all pins, operates from a +1.8V supply, and is packaged in a 56 lead 7x7 mm QFN for easy installation in planar phased array antennas.
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Product
Life-time Measurement System For Silicon Bulks / Ingots With Non-contact
HF-90R
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*Silicon bulk, Prismatic shape (JIS code), Ingot condition*Non-contact photoconduction vibration decay method*Data processing by digital oscilloscope and PC with software
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Silicon Based Thermopile Detector: 4 Channels
ST150 Quad
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A four-channel silicon-based thermopile detector in a TO-8 package. Each active area size is 1.5mm x 1.5mm. Affordable four-channel design with strong output and a very low Temperature Coefficient of Responsivity of -0.04%/C. This detector has a very short thermal shock response to ambient temperature change.
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Product
X-Band Silicon Radar Quad Core IC
AWS-0104
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The AWS-0104 is a highly integrated silicon quad core IC intended for radar and 5G phased array applications. The device supports four radiating elements, single beam transmit, and single beam receive and includes all requisite beam steering controls for 6 bit phase and gain control. The device provides 21 dB gain during transmit mode, 21dB gain in receive mode, +15 dBm output power during transmit, and 3.4 dB NF during receive. Additional features include gain compensation over temperature, temperature reporting, and fast beam switching using eight on-chip beam weight storage registers. The device features ESD protection on all pins, operates from a +1.8V supply, and is packaged in a 56 lead 7x7 QFN for easy installation in planar phased array antennas.
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Product
Silicon Phosphor and Boron Analyze system
HS-ICP-MS
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The Silicon Phosphor and Boron Analyze system HS-ICP-MS is the best system to measure the element like P&B in silicon material, the HS-ICP-MS can detect and analyze over 75 elements.
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Product
Silicon Heavy-doped Pen Tester
HS-MPRT
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Heavy doped testing, especially good for purchase the material.■ Not only sound alarm, but also Led light alarm , to guarantee sorting work accurately.■ adaptable for sorting little granular material, little broken IC Wafer and other little silicon material.■ Can set alarm ranges from 0.0 to 1.0Ω﹡㎝.
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Silicon Charged Particle Radiation Detectors
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ORTEC introduced the first silicon surface barrier detectors for charged particle spectroscopy in the early 1960’s. Since then, ORTEC has expanded the product line with more than ten different options to choose from.
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Ka-Band Silicon SATCOM Tx Quad Core IC
AWMF-0109
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The AWMF-0109 is a highly integrated silicon quad core chip intended for satellite communications transmit applications. The device supports four dual polarization radiating elements with full programmable polarization flexibility. The device provides 22 dB of gain per channel with an output power of +12 dBm per element per polarization. Additional features include gain compensation over temperature, temperature reporting, and Tx output power telemetry. The chip features ESD protection on all pins, operates from a +1.8 V supply, and is packaged in a 48 lead 6x6 mm QFN for easy installation in planar phased array antennas.
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Product
Life-time Measurement System For Silicon Bulks/ingots By JIS Method
HF-100DCA
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*Global standard model for the lifetime test of silicon bulk*JIS direct current anodizing method*Data processing by digital oscilloscope and PC with software
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Silicon Inspection System
NIR-01
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The NIR-01 imaging system is made of CNC engineered Aluminium alloy. The suruface protection is powder painting and electrolitic oxidation on pure aluminium surfaces. The frame of the system is a high quality industrial design. All components are designed for long term heavy usage with minimal maintenance needs. Electrical components are also selected for stability and durability. The block like electronics gives the advantage of easy and quick repair.
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Silicon Irradiance Sensors
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Measure the irradiance intensity on your photovoltaics system precisely at an affordable price with IMT Technology’s robust silicon solar irradiance sensors (Si sensors).
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Product
RF Power Transistors
Silicon MOSFET
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Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Product
20μm Silicon-Based Interdigitated Electrode (IDE)
IES1
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20 μm silicon-based interdigitated electrode (IDE) designed for MEMS sensors, biosensing, photoelectric detection, and electrochemical research. Precision microfabrication on a silicon substrate ensures excellent performance, with customizable electrode materials, dimensions, and layouts available for laboratory and OEM applications.
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Fully Automatic 4 Point Probe System for Silicon Wafer
WS-8800
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*Measurement of resistivity, thickness, conductivity(P/N) and temperature*Tester self-test function, wide measuring range*Thickness, measurement position and temperature correction function for silicon resistivity*Number of cassette station can be changed by customers request*Host (CIM) communication and SMIF or FOUP compatible
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Silicon O/C Content Tester
HS-OCT-6700
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The HS-OCT-6700 system used to measure the O&C in silicon ingot and wafers. The system is the highest performance FT-IR systems available. While the spectrometer has the power to handle the most advanced research-level experiments, routine analyses are performed just as conveniently. Every facet of the Nicolet FT-IR spectrometer has been engineered to facilitate sample handling, introduce options to scientists, and increase laboratory throughput.
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SPM Probes
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AppNano silicon probes are manufactured out of prime grade, low resistivity (0.01- 0.025 Ω-cm), n-type antimony doped, single crystal siliconOur well-established silicon technologies combined with novel micro-fabrication processes achieve consistent high quality monolithic probes with unprecedented tip sharpnessWe have many standard silicon probe series designed for a wide variety of applications that are compatible with most AFM equipment in the market
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Product
Pressure Sensors
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Whatever configuration you require, look to Sensata. Our devices span a spectrum of pressure ranges, configurations and form factors.High pressure (>750psi / 50bar)Micro Silicon Strain Gauge solutions provides rugged reliability and a hermetic seal for a wide variety of environmentsMid pressure (100 to 750psi / 6 to 50 bar)Ceramic capacitive or MEMS solutions offer a wide range of solutions tailored to application needs at superior valueLow pressure (inches of water to 100psi / 2mbar to 6 bar)MEMS solutions including TPMS offer extremely low power consumption and wireless connectivity
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RF Power Transistors
Silicon Bipolar
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Macom Technology Solutions Holdings Inc.
At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3.5 GHz. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all-gold metallization fabrication processes ensure high performance and long term reliability for ground and space applications.
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Pressure Transmitters and Differential Pressure Transmitters
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Fuji Electric has long delivered electronic transmitters, incorporating the micro-capacitance silicon sensor, to our customers worldwide.The FCX-AIII series transmitters feature compact design, high accuracy and performance, long-term stability. They also offer wide measuring ranges and provide a variety of diaphragm materials.
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Product
Non-contact Sheet Resistance/resistivity Measurement Instrument With PC
NC-10 (NC-20)
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*Easy operation and data processing by PC*No damage measurement by non-contact eddy current method*Replaceable probes by meas. range (*Second or more probe is for the option)*1 point measurement of center position*5 types of model for each measuring range*Temperature correction for silicon wafer function
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Product
Switches-SPST
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Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
